SnO$_{2}$:F thin films deposited by RF magnetron sputtering: effect of the SnF$_{2}$ amount in the target on the physical properties

Abstract

SnO$_{2}$:F thin films were prepared by RF magnetron sputtering onto glass substrates using SnF$_{2}$ as fluorine source. The films were deposited under a mixed argon/hydrogen atmosphere at a substrate temperature of 500$^{\circ}$C. The X-ray diffraction shows that polycrystalline films were grown with a phases mixture of SnO$_{2}$ and SnO. The optical transmittance is between 80 and 90%. The physical properties of the films suggest that SnO$_{2}$ thin films grown with small SnF$_{2}$ content in the target can be considered as candidates for transparent electrodes.