Aluminum-doped ZnO polycrystalline films prepared by co-sputtering of a ZnO-Al target

Authors

  • M. Becerril
  • H. Silva-López
  • A. Guillén-Cervantes
  • O. Zela
  • a-Ángel.

Keywords:

II-VI compounds, semiconductors, low resistivity, ZnO-Al films

Abstract

Aluminum-doped Zinc oxide polycrystalline thin films (AZO) were grown on 7059 Corning glass substrates at room temperature by co-sputtering from a ZnO-Al target. The target was designed as follows, high purity elemental Aluminum was evaporated onto a ZnO target covering small areas. The structural, optical, and electrical properties were analyzed as a function of Al content. The Al doped ZnO polycrystalline films showed an n-type conductivity. It was found that the electrical resistivity drops and the carrier concentration increases as a consequence of Al incorporation within the ZnO lattice. In both cases the changes are of several orders of magnitude. From the results, we conclude that, using these ZnO-Al targets, n-type Al doped ZnO polycrystalline films with high transmittance and low resistivity can be obtained.

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Published

2014-01-01

How to Cite

[1]
M. Becerril, H. Silva-López, A. Guillén-Cervantes, O. Zela, and a-Ángel., “Aluminum-doped ZnO polycrystalline films prepared by co-sputtering of a ZnO-Al target”, Rev. Mex. Fís., vol. 60, no. 1 Jan-Feb, pp. 27–0, Jan. 2014.

Issue

Vol. 60 No. 1 Jan-Feb (2014): Revista Mexicana de Física.

Section

Articles

License

Authors retain copyright and grant the Revista Mexicana de Física right of first publication with the work simultaneously licensed under a CC BY-NC-ND 4.0 that allows others to share the work with an acknowledgement of the work's authorship and initial publication in this journal.