Study of the GaAs surface oxide desorption process by annealing in ultra high vacuum conditions

Authors

  • M. López-López
  • A. Guillén-Cervantes
  • Z. Rivera-Alvarez
  • E. López-Luna
  • .
  • I. Hernández-Calderón

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Published

2000-01-01

How to Cite

[1]
M. López-López, A. Guillén-Cervantes, Z. Rivera-Alvarez, E. López-Luna, ., and I. Hernández-Calderón, “Study of the GaAs surface oxide desorption process by annealing in ultra high vacuum conditions”, Rev. Mex. Fís., vol. 46, no. 2, pp. 152–158, Jan. 2000.

Issue

Vol. 46 No. 2 (2000): Revista Mexicana de Física.

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Articles

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Authors retain copyright and grant the Revista Mexicana de Física right of first publication with the work simultaneously licensed under a CC BY-NC-ND 4.0 that allows others to share the work with an acknowledgement of the work's authorship and initial publication in this journal.