Electronic excitation of atoms by positron impact using the scaling Born approach

Authors

  • AOE Lino Jorge Lino

DOI:

https://doi.org/10.31349/RevMexFis.64.598

Keywords:

Born, positron, scaling

Abstract

We consider the efficacy of the scaling Born positron (SBP) approach, in calculating reliable integral cross sections (ICS) for positron impact excitation of electronic states in atoms. We will demonstrate, using specific examples as H, He, Hg, and Mg, that this relatively simple procedure can generate quite accurate ICS when compared with more sophisticated methods. In the absence of the experimental data, comparisons are made with analogous electron scattering.

Downloads

Published

2018-10-31

How to Cite

[1]
A. Lino, “Electronic excitation of atoms by positron impact using the scaling Born approach”, Rev. Mex. Fís., vol. 64, no. 6 Nov-Dec, pp. 598–602, Oct. 2018.

Issue

Section

04 Atomic and Molecular Physics