Determination of the barrier height of Pt-Ir Schottky nano-contacts on Al-doped ZnO thin films by conductive Atomic Force Microscopy

Authors

  • J. Eduardo Rivera L. Escuela Superior de Ingeniería Mecánica y Eléctrica-UA Instituto Politécnico Nacional
  • Narcizo Muñoz A. Escuela Superior de Ingeniería Mecanánica y Eléctrica-UA Instituto Politécnico Nacional
  • Juliana G. Gutiérrez-Paredes Escuela Superior de Ingeniería Mecánica y Eléctrica-UA Instituto Politécnico Nacional
  • Pedro A. Tamayo-Meza Escuela Superior de Ingeniería Mecánica y Eléctrica-UA Instituto Politécnico Nacional.
  • Alejandro Alvarez Z. Escuela Superior de Ingeniería Mecánica y Eléctrica-UA Instituto Politécnico Nacional
  • L. Martínez-Pérez Unidad Profesional Intrdisciplinaria en Ingeniería y Tecnologías Avanzadas Instituto Politécnico Nacional

DOI:

https://doi.org/10.31349/RevMexFis.64.655

Keywords:

Schottky barrier height, Conductive AFM, I-V Schottky characteristics, Pt Schottky nano-contact on ZnO Thin Films, Electrical properties at Nanoscale level.

Abstract

By means of the I-V characteristics measured at room temperature, the height of the Schottky barrier established by the conductive Pt-Ir tip of an Atomic Force Microscope on the aluminum doped ZnO thin films were estimated in the range of 0.58-0.64 eV. The ideality factors were in the range of  2.11-1.39, respectively. These values are in accordance with those reported by other authors that measured the height of the Pt Schottky barrier on ZnO by means of several methods. The procedure detailed in this work suggests that the scanning time for obtaining I-V Schottky characteristics is of the order of 2 ms.

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Published

2018-10-31

How to Cite

[1]
J. E. Rivera L., N. Muñoz A., J. G. Gutiérrez-Paredes, P. A. Tamayo-Meza, A. Alvarez Z., and L. Martínez-Pérez, “Determination of the barrier height of Pt-Ir Schottky nano-contacts on Al-doped ZnO thin films by conductive Atomic Force Microscopy”, Rev. Mex. Fís., vol. 64, no. 6 Nov-Dec, pp. 655–661, Oct. 2018.

Issue

Vol. 64 No. 6 Nov-Dec (2018): Revista Mexicana de Física

Section

14 Other areas in Physics

License

Authors retain copyright and grant the Revista Mexicana de Física right of first publication with the work simultaneously licensed under a CC BY-NC-ND 4.0 that allows others to share the work with an acknowledgement of the work's authorship and initial publication in this journal.