Characterization of high mobility inverted coplanar Zinc Nitride Thin-film Transistors

Authors

  • Miguel Angel Dominguez Jimenez Benemerita Universidad Autonoma de Puebla
  • Jose Pau
  • Ovier Obregon
  • Anayantzi Luna
  • Andres Redondo

DOI:

https://doi.org/10.31349/RevMexFis.65.10

Keywords:

room temperature, thin-film transistors, zinc nitride

Abstract

In this work, high mobility TFTs based on zinc nitride (Zn3N2) sputtered at room temperature using spin-on glass (SOG) as gate dielectric are presented. The inverted coplanar structure is used for the Zn3N2 TFTs. The devices exhibit an on/off-current ratio of 106 and a subthreshold slope of 0.88 V/decade. The extracted field-effect mobility was 15.8 cm2/Vs which is among the highest reported for Zn3N2 TFTs. In addition, n-type MOS capacitors were fabricated and characterized by capacitance – voltage and capacitance – frequency measurements to evaluate the dielectric characteristics of the SOG film.     

 

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Published

2018-12-31

How to Cite

[1]
M. A. Dominguez Jimenez, J. Pau, O. Obregon, A. Luna, and A. Redondo, “Characterization of high mobility inverted coplanar Zinc Nitride Thin-film Transistors”, Rev. Mex. Fís., vol. 65, no. 1 Jan-Feb, pp. 10–13, Dec. 2018.

Issue

Vol. 65 No. 1 Jan-Feb (2019): Revista Mexicana de Física

Section

05 Condensed Matter

License

Authors retain copyright and grant the Revista Mexicana de Física right of first publication with the work simultaneously licensed under a CC BY-NC-ND 4.0 that allows others to share the work with an acknowledgement of the work's authorship and initial publication in this journal.