Physical properties of reactive RF sputtered a-IZON thin films.

Authors

  • J. J. Ortega Unidad Académica de Física, Universidad Autónoma de Zacatecas
  • C. R. Escobedo-Galván Centro de Estudios Científicos y Tecnológicos 18, Instituto Politécnico Nacional
  • F. Avelar-Muñoz Doctorado en Ciencias Básicas, Universidad Autónoma de Zacatecas
  • A. A. Ortiz-Hernández Departamento de Ingeniería en Mecatrónica, Universidad Politécnica de Zacatecas
  • H. Tototzintle-Huitle Unidad Académica de Física, Universidad Autónoma de Zacatecas
  • C. Falcony Departamento de Física, Centro de Investigación y Estudios Avanzados, Instituto Politécnico Nacional
  • and J. J. Araiza Unidad Académica de Física, Universidad Autónoma de Zacatecas

DOI:

https://doi.org/10.31349/RevMexFis.65.133

Keywords:

Indium zinc oxynitride, amorphous oxynitride, Spectral Ellipsometry, amorphous semiconductor, IZON

Abstract

The physical properties of amorphous indium zinc oxynitride (a-IZON) thin films, which were deposited at room temperature by reactive RF magnetron sputtering, were investigated. The results of the investigations indicated that the a-IZON films possessed excellent qualities: high transparency with a very low resistivity from 10-3 Ω∙cm to 10-4 Ω∙cm, while the carrier concentration showed values over 1020 cm-3 with mobility between 10 and 21 cm2⸱V-1⸱s-1. The incorporated nitrogen reduces the typical crystallization of IZO and favors the deposition of transparent thin films. These results show that the IZON is an ideal amorphous material for applications in transparent and flexible optoelectronic devices.

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Published

2019-03-26

How to Cite

[1]
J. J. Ortega, “Physical properties of reactive RF sputtered a-IZON thin films”., Rev. Mex. Fís., vol. 65, no. 2 Mar-Apr, pp. 133–138, Mar. 2019.

Issue

Vol. 65 No. 2 Mar-Apr (2019): Revista Mexicana de Física

Section

05 Condensed Matter

License

Authors retain copyright and grant the Revista Mexicana de Física right of first publication with the work simultaneously licensed under a CC BY-NC-ND 4.0 that allows others to share the work with an acknowledgement of the work's authorship and initial publication in this journal.