Synthesis and crystal structure of the quaternary semiconductor Cu2NiGeS4, a new stannite-type compound

Authors

  • G. E. Delgado Laboratorio de Cristalografía, Departamento de Química, Facultad de Ciencias, Universidad De Los Andes, Mérida, Venezuela http://orcid.org/0000-0003-3970-2387
  • and V. Sagredo Laboratorio de Magnetismo en Sólidos, Departamento de Física, Facultad de Ciencias, Universidad de Los Andes, Mérida 5101, Venezuela

DOI:

https://doi.org/10.31349/RevMexFis.65.355

Keywords:

Chalcogenide, semiconductor, chemical synthesis, X-ray powder diffraction, crystal structure

Abstract

The crystal structure of the quaternary compound Cu2NiGeS4, belonging to the system I2-II-IV-VI4, was characterized by Rietveld refinement using X-ray powder diffraction data. This material crystallize with a stannite structure in the tetragonal space group I2m (Nº 121), Z = 2, unit cell parameters a = 5.3384(1) Å, c = 10.5732(3) Å, V = 301.32(3) Å3, acknowledged as a normal valence adamantane-structure.

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Published

2019-07-01

How to Cite

[1]
G. E. Delgado and and V. Sagredo, “Synthesis and crystal structure of the quaternary semiconductor Cu2NiGeS4, a new stannite-type compound”, Rev. Mex. Fís., vol. 65, no. 4 Jul-Aug, pp. 355–359, Jul. 2019.

Issue

Vol. 65 No. 4 Jul-Aug (2019): Revista Mexicana de Física

Section

05 Condensed Matter

License

Authors retain copyright and grant the Revista Mexicana de Física right of first publication with the work simultaneously licensed under a CC BY-NC-ND 4.0 that allows others to share the work with an acknowledgement of the work's authorship and initial publication in this journal.