Estructura metal-semiconductor-metal en equilibrio

Authors

  • F. Urbano Altamirano CINVESTAV
  • O. Yu. Titov CINVESTAV
  • Yu. G. Gurevich Instituto Mexicano del Petróleo

DOI:

https://doi.org/10.31349/RevMexFis.66.559

Keywords:

portadores de carga, contacto metal-semiconductor, cuasineutralidad

Abstract

This article analyzes the behavior of electric charge carriers (electrons and holes) in a semiconductor material with metal contacts under thermodynamic equilibrium condition. Expressions were obtained for the concentrations of the electrons and holes, as well as for the Debye Radius () both in the general bipolar case, and in the particular cases of n, p and intrinsic type materials. Based on the previous expressions, the case is analyzed when the quasi-neutrality phenomenon appears in a semiconductor material.

Author Biography

F. Urbano Altamirano, CINVESTAV

Posdoctorado. Física CINVESTAV

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Published

2020-09-01

How to Cite

[1]
F. Urbano Altamirano, O. Y. Titov, and Y. G. Gurevich, “Estructura metal-semiconductor-metal en equilibrio”, Rev. Mex. Fís., vol. 66, no. 5 Sept-Oct, pp. 559–567, Sep. 2020.