Modelo del voltaje de descarga en depósitos de ZrO$_{X}$ por erosión iónica reactiva

Authors

  • V. García-Gradilla
  • G. Soto-Herrera
  • R. Machorro-Mejía.
  • E. Mitrani-Abenchuchan

Keywords:

DC reactive sputtering, discharge voltage, thin film

Abstract

A Berg model application for ZrO$_{X}$ thin film deposition by DC reactive sputtering is presented. An alternative treatment to this model is proposed, focused on an engineering point of view. Berg model involves target poisoning as a compound covering a fraction of the target surface, pressure, input flow and pumping speed. In the alternative treatment presented, all these quantities --some hard to be measured- are condensed by considering variations in the target voltage and plasma impedance, that together comprises the discharge voltage. The advantage of this handling is that can be easily used by a field engineer, without necessity of advanced knowledge in material science.

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Published

2009-01-01

How to Cite

[1]
V. García-Gradilla, G. Soto-Herrera, R. Machorro-Mejía., and E. Mitrani-Abenchuchan, “Modelo del voltaje de descarga en depósitos de ZrO$_{X}$ por erosión iónica reactiva”, Rev. Mex. Fís., vol. 55, no. 2, pp. 106–0, Jan. 2009.