Hall effect: the role of nonequilibrium charge carriers

Authors

  • S. Molina Valdovinos
  • Yu. G

Keywords:

Galvanomagnetic phenomena, bipolar semiconductors, recombination, Hall effect

Abstract

A new model of the Hall effect in the case of a bipolar semiconductor is present. Taking into account the nonequilibrium carriers, thermal generation and recombination processes assisted by traps (Shockley-Read model), the expressions for the electrochemical potential of electrons and holes, Hall field and Hall constant $R_ {\rm H}$ are obtained. The dependence of these expressions of the distribution of the carriers along the direction of the Hall field in the case of intrinsic and extrinsic semiconductors is studied.

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Published

2011-01-01

How to Cite

[1]
S. Molina Valdovinos and Y. G, “Hall effect: the role of nonequilibrium charge carriers”, Rev. Mex. Fís., vol. 57, no. 4, pp. 368–0, Jan. 2011.

Issue

Vol. 57 No. 4 (2011): Revista Mexicana de Física.

Section

Articles

License

Authors retain copyright and grant the Revista Mexicana de Física right of first publication with the work simultaneously licensed under a CC BY-NC-ND 4.0 that allows others to share the work with an acknowledgement of the work's authorship and initial publication in this journal.