GaN nanowires and nanotubes growth by chemical vapor deposition method at different NH$_3$ flow rate

Abstract

GaN nanowires and nanotubes have been successfully synthesized via the simple chemical vapor deposition method. NH3 flow rate was found to be a crucial factor in the synthesis of different type of GaN which affects the shape and the diameter of generated GaN nanostructures. X-ray diffraction confirms that GaN nanowires grown on Si(111) substrate under 900$^{\circ}$C and with NH$_3$ flow rate of 50 sccm presents the preferred orientation growth in the (002) direction. It is beneficial to the growth of nanostructure through catalyst annealing. Transmission electron microscopy and scanning electron microscopy were used to measure the size and structures of the samples.