Procesos de ralajamiento en semiconductores altamente excitados. Parte II. GaAs y GaN

Authors

  • P.H. Hernández y A

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Published

1981-01-01

How to Cite

[1]
P. Hernández y A, “Procesos de ralajamiento en semiconductores altamente excitados. Parte II. GaAs y GaN”, Rev. Mex. Fís., vol. 28, no. 4, pp. 553–572, Jan. 1981.

Issue

Vol. 28 No. 4 (1981): Revista Mexicana de Física.

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Articles

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Authors retain copyright and grant the Revista Mexicana de Física right of first publication with the work simultaneously licensed under a CC BY-NC-ND 4.0 that allows others to share the work with an acknowledgement of the work's authorship and initial publication in this journal.