Investigation of the anisotropic etching process used for semiconductor pressure sensor fabrication

Authors

  • P. Pe
  • kov.
  • S. Alcántara
  • M. Aceves
  • M. Linares
  • C. Ramírez
  • .
  • R. Galeazzi

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Published

1992-01-01

How to Cite

[1]
P. Pe, “Investigation of the anisotropic etching process used for semiconductor pressure sensor fabrication”, Rev. Mex. Fís., vol. 39, no. 1, pp. 120–127, Jan. 1992.

Issue

Vol. 39 No. 1 (1992): Revista Mexicana de Física.

Section

Articles

License

Authors retain copyright and grant the Revista Mexicana de Física right of first publication with the work simultaneously licensed under a CC BY-NC-ND 4.0 that allows others to share the work with an acknowledgement of the work's authorship and initial publication in this journal.