SEM and EDS characterization of GaAs layers grown by the close-spaced vapor transport technique at four different geometries using atomic hydrogen as initial reactant
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Published
1996-01-01
How to Cite
[1]
E. Gómez, R. Silva, ., and F. Silva-Andrade, “SEM and EDS characterization of GaAs layers grown by the close-spaced vapor transport technique at four different geometries using atomic hydrogen as initial reactant”, Rev. Mex. Fís., vol. 43, no. 2, pp. 290–299, Jan. 1996.
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Authors retain copyright and grant the Revista Mexicana de Física right of first publication with the work simultaneously licensed under a CC BY-NC-ND 4.0 that allows others to share the work with an acknowledgement of the work's authorship and initial publication in this journal.
