Electronic and optical properties of InAs(110)

Authors

  • X. López-Lozano
  • C. Noguez
  • L. Meza-Montes

Keywords:

Surface reconstruction, surface states, reflectance anisotropy, differential reflectance, semiconductor surface, indium arsenide, III-V surface

Abstract

The electronic and optical properties of the cleavage InAs(110) surface are studied using a semi-empirical tight-binding method which employs an extended, atomic-like, basis set. The surface electronic states are discussed in terms of their electronic character, and compared with other theoretical approaches, and experimental observations. The surface electronic band structure and the Reflectance Anisotropy Spectrum (RAS) are calculated and discussed in terms of the surface electronic states and the atomic structure of the surface.

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Published

2005-01-01

How to Cite

[1]
X. López-Lozano, C. Noguez, and L. Meza-Montes, “Electronic and optical properties of InAs(110)”, Rev. Mex. Fís., vol. 51, no. 2, pp. 168–0, Jan. 2005.

Issue

Vol. 51 No. 2 (2005): Revista Mexicana de Física.

Section

Articles

License

Authors retain copyright and grant the Revista Mexicana de Física right of first publication with the work simultaneously licensed under a CC BY-NC-ND 4.0 that allows others to share the work with an acknowledgement of the work's authorship and initial publication in this journal.