The fundamental absorption edge of CuGa3Te5 ordered defect semiconducting compound

Authors

  • G. Marín
  • C. Rincón
  • S.M. Wasim
  • G. Sánchez-Pérez

Keywords:

Semiconductors, optical absorption, electronic band structure

Abstract

The analysis of the temperature variation of the optical absorption spectra of the ordered defect compound CuGa3Te5, a semiconducting material which crystallizes in a chalcopyrite-related structure with space group P¹4 2c, is made. It has been established that this compound has a direct-allowed band gap between parabolic bands which varies from 1.187 to 1.090 eV in the temperature range from 10 to 300 K. The mean temperature of the phonon involved in the direct band-to-band transition is µ ¼ 125 K. This is comparable with 3/4 µD ¼ 156 K, µD being the Debye temperature of the compound.

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Published

2017-01-01

How to Cite

[1]
G. Marín, C. Rincón, S. Wasim, and G. Sánchez-Pérez, “The fundamental absorption edge of CuGa3Te5 ordered defect semiconducting compound”, Rev. Mex. Fís., vol. 63, no. 6 Nov-Dec, pp. 593–0, Jan. 2017.

Issue

Vol. 63 No. 6 Nov-Dec (2017): Revista Mexicana de Física

Section

Articles

License

Authors retain copyright and grant the Revista Mexicana de Física right of first publication with the work simultaneously licensed under a CC BY-NC-ND 4.0 that allows others to share the work with an acknowledgement of the work's authorship and initial publication in this journal.