Propiedades de transporte en el transistor $\delta$-FET

Authors

  • O. Oubram
  • L. Cisneros-Villalobos
  • L. M
  • M. Abatal

Keywords:

Transport, mobility, conductivity, transistor, -FET

Abstract

Electron transport in the $\delta$-FET transistor has been studied in GaAs. A theoretical model of transport based on the electronic structure is used to calculate mobility and conductivity. Results show that the electrical properties of $\delta$-FET depend on device intrinsic parameters (position of delta-doped quantum well, background density) and the magnitude of the voltage contact. Such results are useful in applications in temperature-insensitive devices.

Downloads

Published

2014-01-01

How to Cite

[1]
O. Oubram, L. Cisneros-Villalobos, L. M, and M. Abatal, “Propiedades de transporte en el transistor $\delta$-FET”, Rev. Mex. Fís., vol. 60, no. 1 Jan-Feb, pp. 22–0, Jan. 2014.

Issue

Vol. 60 No. 1 Jan-Feb (2014): Revista Mexicana de Física.

Section

Articles

License

Authors retain copyright and grant the Revista Mexicana de Física right of first publication with the work simultaneously licensed under a CC BY-NC-ND 4.0 that allows others to share the work with an acknowledgement of the work's authorship and initial publication in this journal.