Propiedades de transporte en el transistor $\delta$-FET

Abstract

Electron transport in the $\delta$-FET transistor has been studied in GaAs. A theoretical model of transport based on the electronic structure is used to calculate mobility and conductivity. Results show that the electrical properties of $\delta$-FET depend on device intrinsic parameters (position of delta-doped quantum well, background density) and the magnitude of the voltage contact. Such results are useful in applications in temperature-insensitive devices.