Comparative analysis of performance in GaN-based quantum well and quantum dot lasers

Authors

  • H. Bouchenafa Hassiba Benbouali University of Chlef
  • B. Benichou Hassiba Benbouali University of Chlef

DOI:

https://doi.org/10.31349/RevMexFis.72.030501

Abstract

This paper presents a comparative analysis of the gain characteristics and threshold current density of nitride laser structures based on quantum wells and quantum dots in the active gain regions by using a model based on the density matrix theory of semiconductor lasers with relaxation broadening. We concentrate on the effects of variation factors for this structure, such as a side length of quantum well and quantum dot, injected carrier density, and temperature, on laser parameters such as optical gain, optical confinement factor, modal gain, and threshold current density. It can be inferred from the results that the  based quantum dot has demonstrated better laser performances (high optical gain value, lower values of transparency carrier density, transparency current density, and threshold current density) than the quantum well in the active medium of the device structure

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Published

2026-05-01

How to Cite

[1]
B. Halima and B. Benichou, “Comparative analysis of performance in GaN-based quantum well and quantum dot lasers”, Rev. Mex. Fís., vol. 72, no. 3, pp. 030501–030511, May 2026.

Issue

Vol. 72 No. 3 (2026): Revista Mexicana de Física

Section

05 Condensed Matter

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Copyright (c) 2026 H. Bouchenafa, B. Benichou

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