Simulation study of laser diode based GaInP/AlGaInP structure
DOI:
https://doi.org/10.31349/RevMexFis.72.051005Keywords:
Laser diode; semi-conductor; GaInP/AlGaInP; pseudo-potentialAbstract
In this work, we investigate the energy levels and optimization of intrinsic parameters (such as number and width of wells, potential barrier width, refractive index, etc.) and extrinsic parameters (including temperature and pressure) in a laser diode based on the GaInP/AlGaInP structure. The computational techniques employed include the pseudo-empirical potential method to determine the electronic band structures and a graphical method for optimization. Our results are consistent with experimental and theoretical results.
Downloads
References
H. Sumitomo et al., “High-Power Short-Cavity AlGaInP Laser Diodes,” SEI Technical Review, 70 (2010) 79. ISSN: 1343- 4330
I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, “Band parameters for III–V compound semiconductors and their alloys,” Journal of Applied Physics, 89 (2001) 5815
V. I. Kozlovsky, S. M. Zhenishbekov, Ya. K. Skasyrsky and M. P. Frolov, High-Power Pulsed, In-Well-Pumped InGaP/AlGaInP Heterostructure Semiconductor Disk Laser, B. Lebedev Phys. Inst., 51 (2024) S191
H. Panwar and J. S. Parmar, Designing of Optical Gain Analysis of Nano-Scale Heterostructure GaInP/AlGaInP Red Laser, ICIMMI ’22: Proceedings of the 4th International Conference on Information Management & Machine Intelligence, 78 (2023) 1
V. M. Titze, S. Caixeiro, A. Di Falco, M. Schubert and M. C. Gather, “Red-Shifted Excitation and Two-Photon Pumping of Biointegrated GaInP/AlGaInP Quantum Well Microlasers,” ACS Photonics, 9 (2022) 952
M. U. Anum, H. Usman and A. Shazma, “Epitaxial analysis of GaInP/AlGaInP red light-emitting diodes with ternary AlGaP quantum barriers for quantum efficiency enhancement,” Physica Scripta, 99 (2024)
F. Mauerhoff, H. Wenzel, A. Maaßdorf, D. Martin, K. Paschke and G. Tränkle, “Optimization of high power AlGaInP laser diodes at 626 nm,” Optical and Quantum Electronics, 56 (2024) 419
S. Adachi, “Band gaps and refractive indices of AlGaAsSb, GaInAsSb, and InPAsSb: Key properties for a variety of the 2–4 µm optoelectronic device applications,” Journal of Applied Physics, 61 (1987) 4869
M. Levinshtein, S. Rumyantsev and M. Shur (Eds.), Handbook Series on Semiconductor Parameters, 2, (World Scientific, 1999). ISBN: 981-02-14120-0
S. J. Lee, T. S. Kwon, K. Nahm and C. K. Kim, Band structure of ternary compound semiconductors beyond the virtual crystal approximation, Journal of Physics: Condensed Matter, 2 (1990) 3253
N. Bouarissa, Electronic properties of GaxIn1−xP from pseudopotential calculations, Materials Chemistry and Physics, 124 (2010) 336
Downloads
Published
How to Cite
Issue
Section
License
Copyright (c) 2026 L. Abdelali, Z. Abed, A. Bouguenna
This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.
Authors retain copyright and grant the Revista Mexicana de Física right of first publication with the work simultaneously licensed under a CC BY-NC-ND 4.0 that allows others to share the work with an acknowledgement of the work's authorship and initial publication in this journal.
