Long-term reliability analysis of bipolar stress in SiC power MOSFETs
DOI:
https://doi.org/10.31349/RevMexFis.72.051602Keywords:
Reliability, charge trapping, bias temperature instabilities, on-resistanceAbstract
This paper examines the reliability of SiC DMOS power transistors in a DC-DC boost converter circuit. This reliability analysis focuses on the impact of bias temperature instabilities (BTI) on the electrical performance of the transistor, taking into account the variation of one of the most critical parameters of a SiC power MOSFET: the on-resistance (Ron). The study presented in this work also provides an insight into the importance of using an accurate physical reliability model to estimate the transistor’s real threshold voltage drift for a long operating time. We demonstrate that SiC DMOS technology exhibits a higher threshold voltage (Vth) and Ron stability when operated in a bipolar mode. As a result, data derived from measure-stress-measure (MSM) sequences are used to calibrate the defect parameters of a two-state non-radiative multi-phonon model (NMP) that captures the charge trapping kinetics of oxide and interface defects in a reliability simulation framework, Comphy. The analysis shows that an extrapolation of device deterioration at operating conditionssettings reduces bias temperature instabilities (BTI), leading to a minimal on-state loss degradation.
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X. Zhu, Y. Long and H. He, Degradation Mechanism and Lifetime Prediction of Three-Pin SiC MOSFETs Under Power Cycling Stress, in IEEE Transactions on Electron Devices, 73 (2026) 939, https://doi.org/10.1109/TED.2025.3641611
P. Wang, Y. Chen, Y. Long, R. Guo, H. He and J. Li, Failure Behavioral Process and Mechanism of SiC MOSFETs under Dynamic Reverse Bias, in IEEE Transactions on Power Electronics, (2026) 1, https://doi.org/10.1109/TPEL.2026.3668842
S. Makhdoom, C. Ren, Wang, Y. Wu, H. Xu, J. Wang, K. Sheng, Short-Circuit Performance Analysis of Commercial 1.7 kV SiC MOSFETs Under Varying Electrical Stress, Micromachines, 16 (2025) 102, https://doi.org/10.3390/mi16010102
V. Mulpuri, Multistate Markov Analysis in Reliability Evaluation and Lifetime Extension of DC-DC Power Converter for Electric Vehicle Applications, IEEE Transportation Electrification Conference and Expo (ITEC), (2018), https://doi.org/10.1109/ITEC.2018.8450102
H. Khazraj, M. Ashouri, F. F. da Silva and C. L. Bak, Investigation of DC-DC Boost Converter for Reliability of Operational Planning, 2018 IEEE International Conference on Environment and Electrical Engineering and 2018 IEEE Industrial and Commercial Power Systems Europe (EEEIC / ICPS Europe), (2018) 1, https://doi.org/10.1109/EEEIC.2018.8493983
M. Sultana Nasrin, Real Time Monitoring of Aging Process in Power Converters Using the SSTDR Generated Impedance Matrix, 2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC), (2013) 1199, https://doi.org/10.1109/APEC.2013.6520451
T. Kimoto and J. A. Cooper, Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices, and Applications, John Wiley & Sons Singapore Pte. Ltd 2014, pp. 1-525, https://doi.org/10.1002/9781118313534
R. Green, A. Lelis and D. Habersat, Threshold-voltage biastemperature instability in commercially-available SiC MOSFETs, Japanese Journal of Applied Physics, 55 (2016) 04EA03, https://iopscience.iop.org/article/10.7567/JJAP.55.04EA03
T. Aichinger, G. Rescher and G. Pobegen, Threshold voltage peculiarities and bias temperature instabilities of SiC MOS FETs, Microelectronics Reliability, 80 (2018) 68, https://doi.org/10.1016/j.microrel.2017.11.020
J. Ortiz Gonzalez and O. Alatise, A Novel Non-Intrusive Technique for BTI Characterization in SiC MOSFETs, IEEE Transactions on Power Electronics, (2018), https://doi.org/10.1109/TPEL.2018.2870067
H. Luo, F. Iannuzzo and M. Turnaturi, Role of Threshold Voltage Shift in Highly Accelerated Power Cycling Tests for SiC MOSFET Modules, in IEEE Journal of Emerging and Selected Topics in Power Electronics, 8 (2020) 1657, https://doi.org/10.1109/JESTPE.2019.2894717
K. Puschkarsky, T. Grasser, T. Aichinger, W. Gustin and H. Reisinger, Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage Instability, in IEEE Transactions on Electron Devices, 66 (2019) 4604, https://doi.org/10.1109/TED.2019.2938262
L. Dupont, S. Lefebvre, M. Bouaroudj, Z. Khatir, J. Faugieres and F. Emorine, Aging Test Results of low voltage MOSFET Modules for electrical vehicles, 2007 European Conference on Power Electronics and Applications, (2007) 1, https://doi.org/10.1109/EPE.2007.4417433
J. Tan et al., Analysis of gate oxide instability of SiC MOSFETs under ultra-high gate voltage pulse stress, Nanotechnology, 37 (2026) 025201, https://doi.org/10.1088/1361-6528/ae2f68
K. Puschkarsky, H. Reisinger, T. Aichinger, W. Gustin and T. Grasser, Understanding BTI in SiC MOSFETs and Its Impact on Circuit Operation, in IEEE Transactions on Device and Materials Reliability, 18 (2018) 144, https://doi.org/10.1109/tdmr.2018.2813063
T. Aichinger, G. Rescher, and G. Pobegen, Threshold voltage peculiarities and bias temperature instabilities of SiC MOSFETs, Microelectronics Reliability, 80 (2018) 68, https://doi.org/10.1016/j.microrel.2017.11.020
A. J. Lelis, R. Green, D. B. Habersat, and M. El, Basic Mechanisms of Threshold-Voltage Instability and Implications for Reliability Testing of SiC MOSFETs, IEEE Transactions on Electron Devices, 62 (2015) 316, https://doi.org/10.1109/TED.2014.2356172
C. Schleich et al., Physical Modeling of Charge Trapping in 4H-SiC DMOSFET Technologies, in IEEE Transactions on Electron Devices, 68 (2021) 4016, https://doi.org/10.1109/TED.2021.3092295
A. J. Lelis et al., Time dependence of bias-stress induced threshold-voltage instability measurements, 2007 International Semiconductor Device Research Symposium, (2007) 1, https://doi.org/10.1109/ISDRS.2007.4422482
C. Schleich et al., Physical Modeling of Bias Temperature Instabilities in SiC MOSFETs, 2019 IEEE International Electron Devices Meeting (IEDM), (2019) 20.5.1, https://doi.org/10.1109/IEDM19573.2019.8993446
P. Liao, Y. Wang, J. -b. Guo, Q. Q. Sun, D. W. Zhang and H. Xu, Degradation Behaviors Comparation and Analysis of Two Typical Trench SiC MOSFETs Under High Gate Voltage Stress, in IEEE Transactions on Device and Materials Reliability, 26 (2026) 292, https://doi.org/10.1109/TDMR.2025.3649972
G. Wang et al., Characterizing Threshold Voltage Drift of BTI stress in SiC MOSFET from First-Principle Calculations, in IEEE Transactions on Device and Materials Reliability, 26 (2026) 178, https://doi.org/10.1109/TDMR. 2026.3659921
J. Cao et al., Investigation of the Threshold Voltage Drift in Trench-Type 1200V SiC MOSFETs Under Bipolar Dynamic Gate Stress, 2025 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia), (2025) 1, https://doi.org/10.1109/WiPDA-Asia63772.2025.11183859
J. P. Kozak, D. J. DeVoto, J. J. Major and K. D. T. Ngo, Trends in SiC MOSFET Threshold Voltage and ON-Resistance Measurements from Thermal Cycling and Electrical Switching Stresses, 10th International Conference on Integrated Power Electronics Systems, (2018) 1, https://ieeexplore.ieee.org/xpl/conhome/8402817/proceeding
T. Ma, H. Qin, B. Zhao, X. Nie and Z. Wu, Evaluation of SiC MOSFET in Buck converter, 2013 IEEE 8th Conference on Industrial Electronics and Applications (ICIEA) (2013) 1213, https://doi.org/10.1109/ICIEA.2013.6566551
G. Rzepa et al., Comphy-A compact-physics framework for unified modeling of BTI, Microelectronics Reliability, 85 (2018) 49, https://doi.org/10.1016/j.microrel.2018.04.002
J. Martin-Martinez, N. Ayala, R. Rodriguez, M. Nafria and X. Aymerich, RELAB: A tool to include MOSFETs BTI and variability in SPICE simulators, 2012 International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD), (2012) 249, https://doi.org/10.1109/SMACD.2012.6339386
Y. Hernandez, B. Stampfer, T. Grasser, and M. Waltl, Impact of Bias Temperature Instabilities on the Performance of Logic Inverter Circuits Using Different SiC Transistor Technologies, Crystals, 11 (2021) 1150, https://doi.org/10.3390/cryst11091150
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