Métodos de medición de espesores de películas delgadas basadas en óxidos semiconductores

Authors

  • Leandro A. Ramajo Instituto de Investigaciones en Ciencia y Tecnolog´ıa de Materiales Universidad Nacional de Mar del Plata
  • Edgar Villegas Instituto de Investigaciones en Ciencia y Tecnolog´ıa de Materiales Universidad Nacional de Mar del Plata
  • Rodrigo Parra Instituto de Investigaciones en Ciencia y Tecnolog´ıa de Materiales Universidad Nacional de Mar del Plata

DOI:

https://doi.org/10.31349/RevMexFis.64.364

Keywords:

Thin films, Thickness measurement, TiO2, SnO2, ZnO

Abstract

Transparent films based on Ti, Sn and Zn oxides are of great importance in electronic devices such as sensors, solar cells and conductive films, then the characterization techniques are highly relevant. The aim of this work is to identify the advantages and disadvantages of direct methods, such as profilometry, and indirect methods such as ellipsometry and spectrophotometry used to quantify film thickness. In this work, films were deposited by spray-pyrolysis on glass substrates at 425±C. Thicknesses varied between 150 and 300 nm. Thicknesses calculated by means of spectrophotometry and ellipsometry, led to differences below 10% and 20 %, respectively, with respect to the value measured
by profilometry.

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Published

2018-06-28

How to Cite

[1]
L. A. Ramajo, E. Villegas, and R. Parra, “Métodos de medición de espesores de películas delgadas basadas en óxidos semiconductores”, Rev. Mex. Fís., vol. 64, no. 4 Jul-Aug, pp. 364–367, Jun. 2018.

Issue

Vol. 64 No. 4 Jul-Aug (2018): Revista Mexicana de Física

Section

05 Condensed Matter

License

Authors retain copyright and grant the Revista Mexicana de Física right of first publication with the work simultaneously licensed under a CC BY-NC-ND 4.0 that allows others to share the work with an acknowledgement of the work's authorship and initial publication in this journal.