Influence of surface generation velocity and field-enhanced carrier generation on the measured generation lifetime and relaxation time constant in MOS structures
Keywords:
Field-enhanced carrier generation, surface generation velocity, MOS structuresAbstract
Today's high quality semiconductor materials are characterized with generation lifetimes in the range 10$^{ - 3 }$-- 10$^{ - 2}$ sec. This requires re-examination of the influence of some factors on the correct extraction of generation lifetime with the measurement techniques used. Surface generation velocity and field-enhanced carrier generation influence on the measured generation lifetime and relaxation time constant in MOS structures. In the present work, analysis of this influence is presented. It is shown how a simple interpretation of the experimental data can introduce a large error in the determination of these parameters. The influence of all factors must be taken into account.Downloads
Published
2003-01-01
How to Cite
[1]
P. Pe, kov., J. Carrillo, and M. Aceves, “Influence of surface generation velocity and field-enhanced carrier generation on the measured generation lifetime and relaxation time constant in MOS structures”, Rev. Mex. Fís., vol. 49, no. 2, pp. 150–0, Jan. 2003.
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Authors retain copyright and grant the Revista Mexicana de Física right of first publication with the work simultaneously licensed under a CC BY-NC-ND 4.0 that allows others to share the work with an acknowledgement of the work's authorship and initial publication in this journal.
