A 540$\mu $T$^{ - 1}$ silicon-based MAGFET

Abstract

This paper describes an MOS transistor-based transducer used for measuring magnetic fields. The setup, the electric/magnetic characterization, and an equivalent circuit for transistor level simulations are presented. The sensor (also called MAGFET), designed in a 1.5$\mu $m CMOS process, presents a relative magnetic sensitivity S$_{r}$=540$\mu $T$^{ - 1}$ at room temperature.