A 540$\mu $T$^{ - 1}$ silicon-based MAGFET

Authors

  • M.A. Dávalos-Santana
  • F. S
  • oval-Ibarra.
  • E. Monto
  • a-Suárez.

Keywords:

Semiconductor devices, field effect devices, microelectronics

Abstract

This paper describes an MOS transistor-based transducer used for measuring magnetic fields. The setup, the electric/magnetic characterization, and an equivalent circuit for transistor level simulations are presented. The sensor (also called MAGFET), designed in a 1.5$\mu $m CMOS process, presents a relative magnetic sensitivity S$_{r}$=540$\mu $T$^{ - 1}$ at room temperature.

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Published

2007-01-01

How to Cite

[1]
M. Dávalos-Santana, F. S, oval-Ibarra., E. Monto, and a-Suárez., “A 540$\mu $T$^{ - 1}$ silicon-based MAGFET”, Rev. Mex. Fís., vol. 53, no. 3, pp. 218–0, Jan. 2007.

Issue

Vol. 53 No. 3 (2007): Revista Mexicana de Física.

Section

Articles

License

Authors retain copyright and grant the Revista Mexicana de Física right of first publication with the work simultaneously licensed under a CC BY-NC-ND 4.0 that allows others to share the work with an acknowledgement of the work's authorship and initial publication in this journal.