Proceso de grabado seco de silicio monocristalino para aplicaciones en guías de onda coplanares

Abstract

In this work, the anisotropic etching and the use of silicon rich oxide (SRO) are studied in order to improve the waveguide coplanar (CPW). Experimental results of dry etching of mono-crystalline silicon for application in CPW's using RIE/ICP reactor are presented. The contribution of the physical as much chemical components of dry etching is observed. The reactive gases that are used are Sulfur hexafluoride (SF$_{6}$) mixed with oxygen (O$_{2}$). For etching the silicon masks of photo-resist and silicon oxide (SiO2) are used, this last one is obtained by atmospheric pressure chemical vapor deposition (APCVD). Speed of etching from 2.8 to 3.4 $\mu $m/min are obtained when using SiO$_{2}$ as mask.