Thin-film transistors based on zinc oxide films by ultrasonic spray pyrolysis

Authors

  • M.A. Dominguez-Jimenez
  • F. Flores-Gracia
  • A. Luna-Flores
  • J. Martinez-Juarez
  • J.A. Luna-Lopez
  • S. Alcantara-Iniesta
  • P. Rosales-Quintero
  • C. Re
  • es-Betanzo.

Keywords:

ZnO, electrical properties, thin film transistors

Abstract

The application of Zinc Oxide (ZnO) films by ultrasonic spray pyrolysis at 250, 300 and 450$^{\circ}$C as active layer in thin-film Transistors (TFTs) is presented. The performance of the devices shows an unexpected behavior in function of the deposition temperature. The ZnO films were deposited from 0.2 M precursor solution of Zinc acetate in methanol, using air as carrier gas. 70nm-thick ZnO was deposited over 100 nm-thick aluminum electrodes patterned on 50 nm-thick thermally grown SiO$_{2}$ on highly doped Si wafers. The highly doped Si wafer was used as the gate electrode. The ZnO TFTs at 250$^{\circ}$C showed field-effect mobilities around of 0.05 cm$^{2}$/Vs and threshold voltages of 8 V.

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Published

2015-01-01

How to Cite

[1]
M. Dominguez-Jimenez, “Thin-film transistors based on zinc oxide films by ultrasonic spray pyrolysis”, Rev. Mex. Fís., vol. 61, no. 2 Mar-Apr, pp. 123–0, Jan. 2015.

Issue

Vol. 61 No. 2 Mar-Apr (2015): Revista Mexicana de Física.

Section

Articles

License

Authors retain copyright and grant the Revista Mexicana de Física right of first publication with the work simultaneously licensed under a CC BY-NC-ND 4.0 that allows others to share the work with an acknowledgement of the work's authorship and initial publication in this journal.