Refractive index expressions for Ga$_{1-x}$ln$_{x}$As, GaAs$_{1-x}$N$_x$ and Ga$_{1-x}$ln$_{x}$N$_y$As$_{1-y}$ alloys

Authors

  • J.A. Martín
  • M. Sánchez

Keywords:

GaInNAs, GaAsN, diluted nitrides semiconductors, refractive index, optical properties

Abstract

An expression suitable to estimate the refractive index of Ga$_{1-x}$ln$_{x}$N$_y$As$_{1-y}$ with $0\leq x\leq 0.4$ and $0\leq y\leq 0.04$ for band gap energies from 0.8 to 1.1 eV is presented. In case of Ga$_{1-x}$ln$_{x}$As, an improved expression, which shows better agreement with experimental data than previously reported expression, is proposed.

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Published

2015-01-01

How to Cite

[1]
J. Martín and M. Sánchez, “Refractive index expressions for Ga$_{1-x}$ln$_{x}$As, GaAs$_{1-x}$N$_x$ and Ga$_{1-x}$ln$_{x}$N$_y$As$_{1-y}$ alloys”, Rev. Mex. Fís., vol. 61, no. 4 Jul-Aug, pp. 245–0, Jan. 2015.

Issue

Vol. 61 No. 4 Jul-Aug (2015): Revista Mexicana de Física.

Section

Articles

License

Authors retain copyright and grant the Revista Mexicana de Física right of first publication with the work simultaneously licensed under a CC BY-NC-ND 4.0 that allows others to share the work with an acknowledgement of the work's authorship and initial publication in this journal.