On the difference in the value of surface generation velocity measured in MOS structures by the voltage pulse and double-sweep voltage techniques

Authors

  • P. Pe
  • kov.
  • J. Carrillo
  • .
  • M. Aceves

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Published

1990-01-01

How to Cite

[1]
P. Pe, kov., J. Carrillo, ., and M. Aceves, “On the difference in the value of surface generation velocity measured in MOS structures by the voltage pulse and double-sweep voltage techniques”, Rev. Mex. Fís., vol. 37, no. 4, pp. 678–687, Jan. 1990.

Issue

Vol. 37 No. 4 (1990): Revista Mexicana de Física.

Section

Articles

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Authors retain copyright and grant the Revista Mexicana de Física right of first publication with the work simultaneously licensed under a CC BY-NC-ND 4.0 that allows others to share the work with an acknowledgement of the work's authorship and initial publication in this journal.

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