Interface states effect on conduction mechanisms and barrier height homogeneities of Au/n-GaAs Schottky structures in a wide temperature range
DOI:
https://doi.org/10.31349/RevMexFis.72.021001Keywords:
Au/n-GaAs; interface states; electrical behavior; conduction mechanisms; barrier height inhomogeneities; temperature.Abstract
In this paper, a study of interface states Nss effect on the conduction mechanisms and the barrier height homogeneities of Au/n-GaAs Schottky structures, in a large range of temperatures. As demonstrated, the structure with low Nss shows that the ideality factor n decreases and the barrier heightɸ_b increases as the temperature increases. On the other hand, the structure with high Nss shows that the ideality factor n decreases then increases with increasing temperature. The increasing of the ideality factor in high temperatures is due to the tunnel current, caused by the interface states. The structure of low Nss shows that the dominant current is the TFE conduction mechanism and gives a homogeneous barrier height over all temperature range. While the structure of high Nss shows that the dominant current is TFE at low temperatures (75-300 K) and deviates to FE at high temperatures (300-400 K), and gives an inhomogeneous barrier height.
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