Improvement I-V characteristics of (GaAs/Ge) heterojunction at different thicknesses and annealing temperatures by thermal evaporation method
DOI:
https://doi.org/10.31349/RevMexFis.72.061007Keywords:
GaAs, solar cell, I V characteristics, thickness, thin filmsAbstract
In the present work we are reporting the preparation conditions of GaAs thin films and the technique which was employed to produce films deposited on Ge wafers substrate at constant substrate temperature by thermal evaporation method are described. Also it includes photovoltaic measurements which are presented by current – voltage characteristics, photocurrent, short – circuit, open – circuit voltage of GaAs/Ge heterojunction, at room temperature and different annealing temperatures have been measured. All the samples were prepared under constant conditions (pressure, substrate temperature and rate of deposition); the main parameters that control the nature of the film properties are thickness (0.4, 0.7, 1.0 and 1.5) μm and annealing temperature (473 and 523) K. The dark current decreases with increasing of thickness; whereas increases slightly with increasing of annealing temperatures. Under illumination, the photocurrent increases with increasing of annealing temperatures and decreases with increasing of thickness except at thickness equal to 1.5m. There is a linear increasing in the first part of the relation between Isc and Voc with incident power intensity and then the saturation region appeared. The Isc and Voc decrease with increasing of thickness, while increase with increase of annealing temperatures.
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Copyright (c) 2026 Imad N. Kashkool, Saif Khalel Jasim, Aws K. Mohammed, Mohamed T. Abd; Ahmed M. Shano
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