BaTi(O$_{1-x}$S$_x$)$_3$ chalcogenide perovskite thin films with band gap ideal for solar cell applications
DOI:
https://doi.org/10.31349/RevMexFis.72.041601Keywords:
perovskite thin films, Chalcogenide perovskite, oxisulfide perovskite, BaTi(OS)3, band gap engineeringAbstract
BaTi(O$_{1-x}$S$_x$)$_3$ chalcogenide perovskite thin films were deposited by the spin coating technique, using a solution formed by a powder of BaTi(O0.50S0.50)$_3$ perovskite compound previously synthesized and ethanol as a solvent. To obtain the powdered BaTi(O$_{1-x}$S$_x$)$_3$ perovskite compound used as precursor material, a sulfidization process to barium titanate (BaTiO$_3$) was carried out in a constant flow CS$_2$/Ar atmosphere at a temperature of 600 °C for four hours. After depositing, the films were annealed for one hour in a tube furnace at a temperature of 400 °C, in an Ar and CS$_2$ reactive atmosphere. EDX-RF, XRD, FTIR and Uv-Vis-NIR techniques were used to analyze the structural, vibrational, and optical properties of the films. All deposited and annealed films showed the hexagonal crystalline structure typical of BaTiS$_3$ perovskite with an absorption coefficient greater than 4x10$^4$ cm$^{-1}$ in the range 600 to 950 nm. The band gap of the BaTi(O$_{1-x}$S$_x$)$_3$ chalcogenide perovskite thin films was narrowed as a function of the concentration of sulfur in the sample. The final band gap values obtained were 1.51, 1.45 and 1.35 eV for sulfur percentages of 24.3, 25.3 and 28.7, respectively. This results projected the BaTi(O$_{1-x}$S$_x$)$_3$ chalcogenide perovskites have the ideal band gap for they possible applications of perovskite solar cells.
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