Phosphorus ion implantation gettering effects in MOS structures

Authors

  • P. Pe
  • kov.
  • M. Aceves
  • .
  • W. Calleja

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Published

1991-01-01

How to Cite

[1]
P. Pe, kov., M. Aceves, ., and W. Calleja, “Phosphorus ion implantation gettering effects in MOS structures”, Rev. Mex. Fís., vol. 38, no. 5, pp. 836–845, Jan. 1991.

Issue

Vol. 38 No. 5 (1991): Revista Mexicana de Física.

Section

Articles

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Authors retain copyright and grant the Revista Mexicana de Física right of first publication with the work simultaneously licensed under a CC BY-NC-ND 4.0 that allows others to share the work with an acknowledgement of the work's authorship and initial publication in this journal.