SEM and EDS characterization of GaAs layers grown by the close-spaced vapor transport technique at four different geometries using atomic hydrogen as initial reactant

Authors

  • E. Gómez
  • R. Silva
  • .
  • F. Silva-Andrade

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Published

1996-01-01

How to Cite

[1]
E. Gómez, R. Silva, ., and F. Silva-Andrade, SEM and EDS characterization of GaAs layers grown by the close-spaced vapor transport technique at four different geometries using atomic hydrogen as initial reactant, Rev. Mex. Fís. 43, (1996).

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