The effect of the photon recycling phenomena on the current gain characteristics of (GaAl)As-GaAs-GaAs heterojunction transistors

Authors

  • P. Villaseñor-González
  • J. Dorantes-Dávila
  • .
  • A. Lastras-Martínez

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Published

1998-01-01

How to Cite

[1]
P. Villaseñor-González, J. Dorantes-Dávila, ., and A. Lastras-Martínez, “The effect of the photon recycling phenomena on the current gain characteristics of (GaAl)As-GaAs-GaAs heterojunction transistors”, Rev. Mex. Fís., vol. 44, no. 1, pp. 68–72, Jan. 1998.

Issue

Vol. 44 No. 1 (1998): Revista Mexicana de Física.

Section

Articles

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Authors retain copyright and grant the Revista Mexicana de Física right of first publication with the work simultaneously licensed under a CC BY-NC-ND 4.0 that allows others to share the work with an acknowledgement of the work's authorship and initial publication in this journal.