Preparación de películas delgadas del sistema Ti-Al-O mediante rf-sputtering

Authors

  • J.A. Montes de Oca
  • J. Ceballos-Alvarez
  • J. Galaviz-Pérez J.-P
  • M. Laha
  • e.
  • J. Muñoz-Saldaña

Keywords:

Thin films, \textit{rf-sputtering}, Ti-Al-O system

Abstract

In the present work Ti-Al-O thin films were synthesized by rf-sputtering technique on glass and silicon (Si) substrates using TiAl and Ti$_{3}$Al targets in a sputtering chamber with an Ar-O$_{2}$ atmosphere. Ti-Al-O thin films were obtained varying experimental parameters such as oxygen percent fed to the reaction chamber, plasma power density and substrate temperature. The films deposited on glass substrates were used to evaluate their optical properties, while those deposited on Si substrates were used to evaluate mechanical and morphological properties. The crystalline structure, morphology, chemical composition and optical properties of the films were evaluated by X-ray diffraction (XRD), high-resolution scanning electron microscopy (HR-SEM), Auger Electron Spectroscopy (AES) and Visible UV Spectroscopy (UV-VIS). Films thicknesses were measured using a profiler. The roughness and mechanical properties such as hardness and Young's modulus were analyzed by atomic force microscopy (AFM) and nanoindentation technique, respectively.

Downloads

Published

2010-01-01

How to Cite

[1]
J. Montes de Oca, J. Ceballos-Alvarez, J. Galaviz-Pérez J.-P, M. Laha, e., and J. Muñoz-Saldaña, “Preparación de películas delgadas del sistema Ti-Al-O mediante rf-sputtering”, Rev. Mex. Fís., vol. 56, no. 2, pp. 118–0, Jan. 2010.