Electrical characterization of planarized a-SiGe:H Thin-film Transistors

Authors

  • M. Dominguez
  • P. Rosales
  • A. Torres

Keywords:

Thin-film transistor, hydrogenated amorphous silicon--germanium, low-temperature, spin-on glass, spice

Abstract

In this work the electrical characterization of n-channel a-SiGe:H TFTs with planarized gate electrode is presented. The planarized a-SiGe:H TFTs were fabricated at 200$^{\circ}$C on corning glass substrate. The devices exhibit a subthreshold slope of 0.56 V/Decade, an on/off-current ratio approximately of 10$^{6}$ and off-current approximately of 0.3$\times$10$^{ - 12}$ A. The results show an improvement of the electrical characteristics when are compared to those unplanarized devices fabricated at higher temperature. Moreover, the simulation of the device using a SPICE model is presented.

Downloads

Published

2013-01-01

How to Cite

[1]
M. Dominguez, P. Rosales, and A. Torres, “Electrical characterization of planarized a-SiGe:H Thin-film Transistors”, Rev. Mex. Fís., vol. 59, no. 1, pp. 62–0, Jan. 2013.

Issue

Vol. 59 No. 1 (2013): Revista Mexicana de Física.

Section

Articles

License

Authors retain copyright and grant the Revista Mexicana de Física right of first publication with the work simultaneously licensed under a CC BY-NC-ND 4.0 that allows others to share the work with an acknowledgement of the work's authorship and initial publication in this journal.