Caracterización de capacitores MOS basados en peliculas de oxido de hafnio obtenidas a 150$^{\circ}$C

Authors

  • S. Cerón
  • J. Hernandez
  • M.A. Dominguez

Keywords:

Hafnium oxide, MOS capacitor, electrical characterization

Abstract

The fabrication and characterization of MOS capacitors with Hafnium Oxide as dielectric obtained at 150$^\circ$C is described. The Hafnium Oxide thin films were obtained by spin-coating. The MOS capacitors were characterized employing measurements of capacitance vs. voltage, capacitance vs. frequency and current vs. voltage. The results demonstrate the feasibility of Hafnium Oxide film as a dielectric in electronic devices.

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Published

2016-01-01

How to Cite

[1]
S. Cerón, J. Hernandez, and M. Dominguez, “Caracterización de capacitores MOS basados en peliculas de oxido de hafnio obtenidas a 150$^{\circ}$C”, Rev. Mex. Fís., vol. 62, no. 6 Nov-Dec, pp. 600–0, Jan. 2016.

Issue

Vol. 62 No. 6 Nov-Dec (2016): Revista Mexicana de Física

Section

Articles

License

Authors retain copyright and grant the Revista Mexicana de Física right of first publication with the work simultaneously licensed under a CC BY-NC-ND 4.0 that allows others to share the work with an acknowledgement of the work's authorship and initial publication in this journal.