Caracterización de capacitores MOS basados en películas de óxido de hafnio obtenidas a 150$^∘$C
DOI:
https://doi.org/10.31349/RevMexFis.62.6.600Keywords:
Hafnium oxide, MOS capacitor, electrical characterizationAbstract
The fabrication and characterization of MOS capacitors with Hafnium Oxide as dielectric obtained at 150$^\circ$C is described. The Hafnium Oxide thin films were obtained by spin-coating. The MOS capacitors were characterized employing measurements of capacitance vs. voltage, capacitance vs. frequency and current vs. voltage. The results demonstrate the feasibility of Hafnium Oxide film as a dielectric in electronic devices.Downloads
Download data is not yet available.
Downloads
Published
2016-01-01
How to Cite
[1]
S. Cerón, J. Hernandez, and M. Dominguez, “Caracterización de capacitores MOS basados en películas de óxido de hafnio obtenidas a 150$^∘$C”, Rev. Mex. Fís., vol. 62, no. 6, pp. 600–603, Jan. 2016.
Issue
Section
Articles
License
Copyright (c) 2018 Revista Mexicana de Física
This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.
Authors retain copyright and grant the Revista Mexicana de Física right of first publication with the work simultaneously licensed under a CC BY-NC-ND 4.0 that allows others to share the work with an acknowledgement of the work's authorship and initial publication in this journal.
