Preparation, differential thermal analysis and crystal structure of the new quaternary compound CuVInSe3

Authors

  • Gustavo Marroquin Instituto Mexicano del Petróleo, Eje Central Lázaro Cárdenas Norte 152, México DF 07730, México
  • Gerzon E. Delgado Laboratorio de Cristalografía, Departamento de Química, Facultad de Ciencias, Universidad De Los Andes, Mérida, Venezuela http://orcid.org/0000-0003-3970-2387
  • Pedro Grima-Gallardo Centro de Estudios de Semiconductores, Departamento de Física, Facultad de Ciencias, Universidad de Los Andes, Mérida 5101, Venezuela and Centro Nacional de Tecnologías Ópticas (CNTO) y Centro Investigaciones de Astronomía (CIDA), Mérida 5101, Venezuela
  • Miguel Quintero Centro de Estudios de Semiconductores, Departamento de Física, Facultad de Ciencias, Universidad de Los Andes, Mérida 5101, Venezuela

DOI:

https://doi.org/10.31349/RevMexFis.64.548

Keywords:

Chemical synthesis, X-ray powder diffraction, Crystal structure, Differential thermal analysis, Chalcogenide, Semiconductor

Abstract

The crystal structure of the quaternary compound CuVInSe3 belonging to the system (CuInSe2)1-x(VSe)x with x= ½, was analyzed using X-ray powder diffraction data. This material was synthesized by the melt and anneal method and crystallizes in the tetragonal space group P2c (Nº 112), with unit cell parameters a = 5.7909(4) Å, c = 11.625(1) Å, V = 389.84(5) Å3. The Rietveld refinement of 25 instrumental and structural variables led to Rexp = 6.6 %, Rp = 8.7 %, Rwp = 8.8 % and S = 1.3 for 4501 step intensities and 153 independent reflections. This compound has a normal adamantane structure and is isostructural with CuFeInSe3. The DTA indicates that this compound melts at 1332 K.

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Published

2018-10-31

How to Cite

[1]
G. Marroquin, G. E. Delgado, P. Grima-Gallardo, and M. Quintero, “Preparation, differential thermal analysis and crystal structure of the new quaternary compound CuVInSe3”, Rev. Mex. Fís., vol. 64, no. 6 Nov-Dec, pp. 548–552, Oct. 2018.